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Deep Reactive Ion Etching
Bosch engineering is continuously optimizing the use of DRIE to avail the potential of this enabling process. Numerous combinations of mask layers, etch stop, cleaning and characterization methods have been established. The MEMS community calls the resulting procedure the "Bosch Process".
Isotropic etching of oxides or silicon is applied to realize movable MEMS structures or cavities.
This anisotropic process is available for high volume throughput. Established procedures utilize KOH wet etching as well as electrochemical KOH etching with etch stop on depleted pn-transitions.
Wafer bonding techniques can be offered with different requirements and specifications e.g. bonding material (glas frit, anodic bonding), enclosed pressure and medium, alignment accuracy.
Depending on the workflow IC compatible metals or „exotic“ materials like Pt can be used in established procedures including sputtering and etching techniques.
Depending on the workflow a variety of lithography tools can be implemented.
Thin -film deposition
A huge portfolio of deposition methods is available.
MEMS experience at Bosch goes back numerous generations of automotive sensors produced since 1994. Starting with integrated pressure sensors the product portfolio diversified rapidly. Today a large number of applications are based on Bosch‘s MEMS process platforms. Our process engineering is attended to the development and continuous optimisation of key MEMS technologies. A huge pool of experience is available in our R&D divisions.
Bosch‘s inertial sensors are based on surface micromachining. Key procedures like sacrificial etching or deep reactive ion etching have been developed to meet the demands of high-volume throughput.
Pressure sensors have been realized in bulk and surface micromaching techniques making use of optimized thin-film properties and reliable batch processes concepts.